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| Ordering number : EN8564 2SD2600 SANYO Semiconductors DATA SHEET 2SD2600 Applications * NPN Triple Diffused Planar Silicon Darlington Transistor Driver Applications Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. Features * * High DC current gain. Large current capacity and wide ASO. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25C Conditions Ratings 110 100 6 8 12 35 150 --55 to +150 Unit V V V A A W C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE fT VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO ton tstg tf VCB=80V, IE=0A VEB=5V, IC=0A VCE=3V, IC=4A VCE=5V, IC=4A IC=4A, IB=8mA IC=4A, IB=8mA IC=5mA, IE=0A IC=50mA, RBE= See specified test circuit. See specified test circuit. See specified test circuit. 110 100 0.6 4.8 1.6 Conditions Ratings min typ max 0.1 3.0 1500 4000 20 0.9 1.5 2.0 MHz V V V V s s s Unit mA mA Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 73106IA MS IM TA-1084 No.8564-1/3 2SD2600 Package Dimensions unit : mm (typ) 7002-003 OUTPUT 8.2 7.8 6.2 3 8.4 10.0 Switching Time Test Circuit 0.4 0.2 0.6 PW=50s DC1% INPUT IB2 TUT IB1 RB RL 12.5 4.2 1.2 0.7 50 1.0 2.54 1 2 VR + 100F + 470F VCC=50V 1.0 2.54 6.2 5.2 0.3 0.6 7.8 5.08 10.0 6.0 2.5 1 : Base 2 : Emitter 3 : Collector SANYO : ZP VBE= --5V 500IB1= --500IB2=IC=4A Electrical Connection C B 6k 200 E 10 IC -- VCE From top 20mA 18mA 16mA 14mA 12mA 10mA 8mA 6mA 4m A 2mA Collecotr Current, IC -- A 8 IC -- VCE From top 2000A 1800A 1600A 1400A 1200A Collecotr Current, IC -- A 8 6 1000A 800A 6 4 600A 4 400A 2 2 200A 0 0 1 2 3 IB=0mA 4 5 IT03402 0 0 1 2 3 IB=0A 4 5 IT03403 Collector-to-Emitter Voltage, VCE -- V 8 IC -- VBE Collector-to-Emitter Voltage, VCE -- V 2 hFE -- IC 0C VCE=3V 10000 7 5 12 Ta= VCE=3V Collector Current, IC -- A DC Current Gain, hFE 6 25 C 3 2 1000 7 5 3 2 100 0C 2 Ta=1 2 25C 4 --40C --40 C 0 0.4 0.8 1.2 1.6 2.0 2.4 IT03404 7 5 0.1 2 3 5 7 1.0 2 3 5 Base-to-Emitter Voltage, VBE -- V Collector Current, IC -- A 7 10 IT03405 No.8564-2/3 2SD2600 10 7 VCE(sat) -- IC IC / IB=500 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 10 7 5 VBE(sat) -- IC IC / IB=500 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 3 2 3 2 Ta= --40C 1.0 25C 7 5 3 0.1 Ta= --40C 25C 1.0 7 5 0.1 120C 120C 2 3 5 7 1.0 2 3 5 Collector Current, IC -- A 2 10 5 10 IT03406 7 2 3 5 7 1.0 2 3 5 ASO Collector Current, IC -- A 50 7 10 IT03407 PC -- Tc ICP=12A 100 Tc=25C Collector Dissipation, PC -- W 7 2 IT03408 IC=8A ms ms 10 1m s Collector Current, IC -- A 40 3 2 1.0 5 3 2 0.1 5 3 2 2 30 DC op er ati on 20 10 1ms to 100ms : Single pulse 3 5 7 10 2 3 5 100 0 0 20 40 60 80 100 120 140 160 Collector-to-Emitter Voltage, VCE -- V Case Temperature, Tc -- C IT03409 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2006. Specifications and information herein are subject to change without notice. PS No.8564-3/3 |
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